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HY3306P

N-Channel Enhancement Mode MOSFET

HY3306P Features

* 60V/130A RDS(ON) = 5.4 mΩ (typ.) @ VGS=10V

* 100% avalanche tested

* Reliable and Rugged

* Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications

* Switching application

* Power Managem

HY3306P General Description

DS G TO-220FB-3L DS G TO-263-2L Applications

* Switching application

* Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S PB HY3306 HY3306 YYÿ XXXJWW G YYÿ XXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assem.

HY3306P Datasheet (3.80 MB)

Preview of HY3306P PDF

Datasheet Details

Part number:

HY3306P

Manufacturer:

HOOYI

File Size:

3.80 MB

Description:

N-channel enhancement mode mosfet.

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TAGS

HY3306P N-Channel Enhancement Mode MOSFET HOOYI

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