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HY3312PS, HY3312 Datasheet - HOOYI

HY3312PS N-Channel Enhancement Mode MOSFET

HY3312P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 125 ±25 175 -55 to 175 130 IDM Pulsed Drain Current ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to.

HY3312-HOOYI.pdf

This datasheet PDF includes multiple part numbers: HY3312PS, HY3312. Please refer to the document for exact specifications by model.
HY3312PS Datasheet Preview Page 2 HY3312PS Datasheet Preview Page 3

Datasheet Details

Part number:

HY3312PS, HY3312

Manufacturer:

HOOYI

File Size:

760.08 KB

Description:

N-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: HY3312PS, HY3312.
Please refer to the document for exact specifications by model.

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TAGS

HY3312PS HY3312 N-Channel Enhancement Mode MOSFET HOOYI

HY3312PS Distributor