HY3306B Datasheet, Mosfet, HOOYI

HY3306B Features

• Mosfet
• 60V/130A RDS(ON) = 5.4 mΩ (typ.) @ VGS=10V
• 100% avalanche tested
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant) Pin

PDF File Details

Part number:

HY3306B

Manufacturer:

HOOYI

File Size:

3.80MB

Download:

📄 Datasheet

Description:

N-channel enhancement mode mosfet. DS G TO-220FB-3L DS G TO-263-2L Applications

Switching application

Power Management for Inverter Systems. D G

HY3306B Application

• Applications
• Switching application
• Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Informatio

TAGS

HY3306B

HOOYI

📁 Related Datasheet

HY3306P - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3306P/B N-Channel Enhancement Mode MOSFET Features • 60V/130A RDS(ON) = 5.4 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY3312B - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3312P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS.

HY3312M - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3312P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS.

HY3312P - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3312P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS.

HY3312PM - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3312P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS.

HY3312PS - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3312P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS.

HY3003 - N-Channel MOSFET (HOOYI)
HY3003P/B N-Channel Enhancement Mode MOSFET Features • 30V/100A RDS(ON)= 3.5mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Exce.

HY3003B - N-Channel MOSFET (HOOYI)
HY3003P/B N-Channel Enhancement Mode MOSFET Features • 30V/100A RDS(ON)= 3.5mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Exce.

HY3003P - N-Channel MOSFET (HOOYI)
HY3003P/B N-Channel Enhancement Mode MOSFET Features • 30V/100A RDS(ON)= 3.5mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Exce.

HY3007B - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3007P/M/B/PS/PM Features • 68V / 120 A RDS(ON)= 5.0 m (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • Lead Free and Green .