
HY4903B6 (HOOYI)
N-Channel Enhancement Mode MOSFET
HY4903B6
N-Channel Enhancement Mode MOSFET
Feature Description
30V/314A RDS(ON)= 1.3mΩ(typ.)@VGS = 10V RDS(ON)= 1.7mΩ(typ.)@VGS = 4.5V
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HY4903B6 N-Channel Enhancement Mode MOSFET Featu.
N-Channel Enhancement Mode MOSFET
HY4903B6 Distributor