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HY4903B6 Datasheet - HOOYI

HY4903B6 N-Channel Enhancement Mode MOSFET

* 30V/314A RDS(ON)= 1.3mΩ(typ.)@VGS = 10V RDS(ON)= 1.7mΩ(typ.)@VGS = 4.5V * 100% Avalanche Tested * Reliable and Rugged * Lead Free and Green Devices Available (RoHS Compliant) Applications * Switch application * Brushless Motor Drive * DC-DC * Electric Power Steering.

HY4903B6-HOOYI.pdf

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Datasheet Details

Part number:

HY4903B6

Manufacturer:

HOOYI

File Size:

629.05 KB

Description:

N-channel enhancement mode mosfet.

HY4903B6 Distributor

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HY4903B6 HY4903B6 N-Channel Enhancement Mode MOSFET HOOYI