HYG006N04LS1TA Datasheet | Specifications & PDF Download

HYG006N04LS1TA N-Channel Enhancement Mode MOSFET

HYG006N04LS1TA Feature  40V/600A RDS(ON)=0.45 m.

HYG006N04LS1TA (HUAYI)

N-Channel Enhancement Mode MOSFET

HYG006N04LS1TA Feature  40V/600A RDS(ON)=0.45 mΩ(typ.)@VGS = 10V RDS(ON)=0.61 mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Hal

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