
HYG013N04NR1B6 (HUAYI)
N-Channel Enhancement Mode MOSFET
HYG013N04NR1B6
Single N-Channel Enhancement Mode MOSFET
Feature
40V/377A RDS(ON)= 1.1 mΩ(typ.) @VGS = 10V
100% Avalanche Tested Reliable and R
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