HYG023N04LQ1B Datasheet | Specifications & PDF Download

HYG023N04LQ1P/B N-Channel Enhancement Mode MOSFET Feature  40V/170A RDS(ON)= 2.3 mΩ(typ.) @VGS = 10V RDS(ON)= 3.0mΩ(typ.) @VGS = 4.5V  100% Avalan

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