
HYG023N04LS1B - N-Channel Enhancement Mode MOSFET
HYG023N04LS1P/B
N-Channel Enhancement Mode MOSFET
Feature
40V/170A RDS(ON)= 2.1 mΩ (typ.) @VGS = 10V RDS(ON)= 2.9 mΩ (typ.) @VGS = 4.5V
100% Ava
(10 views)
HYG023N04LS1P/B N-Channel Enhancement Mode MOSFET.
HYG023N04LS1B Distributor