
HYG023N04LS1P (HOOYI)
N-Channel Enhancement Mode MOSFET
HYG023N04LS1P/B
N-Channel Enhancement Mode MOSFET
Feature
40V/170A RDS(ON)= 2.1 mΩ (typ.) @VGS = 10V RDS(ON)= 2.9 mΩ (typ.) @VGS = 4.5V
100% Ava
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