HYG023N04NR1B Datasheet | Specifications & PDF Download

HYG023N04NR1B N-Channel Enhancement Mode MOSFET

HYG023N04NR1P/B Feature  45V/179A RDS(ON)= 2.2.

HYG023N04NR1P/B Feature  45V/179A RDS(ON)= 2.2mΩ(typ.) @VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Availa

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