HYG024N03LR1P Datasheet | Specifications & PDF Download

HYG024N03LR1P N-Channel Enhancement Mode MOSFET

HYG024N03LR1P/B Feature  30V/160A RDS(ON)=2.1m.

N-Channel Enhancement Mode MOSFET

HYG024N03LR1P/B Feature  30V/160A RDS(ON)=2.1mΩ(typ.)@VGS = 10V RDS(ON)=2.7mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead-

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