HYG025N06LS1B (HUAYI)
N-Channel Enhancement Mode MOSFET
HYG025N06LS1P/B
Single N-Channel Enhancement Mode MOSFET
Feature
60V/160A RDS(ON)= 2.5 mΩ (typ.) @ VGS = 10V RDS(ON)= 3.8 mΩ (typ.) @ VGS = 4.5V
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HYG025N06LS1P/B Single N-Channel Enhancement Mode.
N-Channel Enhancement Mode MOSFET
HYG025N06LS1B Distributor
