
HYG028N10NS1B6 - N-Channel Enhancement Mode MOSFET
HYG028N10NS1B6
N-Channel Enhancement Mode MOSFET
Feature
100V/230A RDS(ON)=2.4mΩ (typ.) @ VGS = 10V
100% Avalanche Tested Reliable and Rugged
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HYG028N10NS1B6 N-Channel Enhancement Mode MOSFET .
HYG028N10NS1B6 Distributor