HYG030N03LQ1B Datasheet | Specifications & PDF Download

HYG030N03LQ1B N-Channel Enhancement Mode MOSFET

HYG030N03LQ1P/B Feature  30V/100A RDS(ON)=2.8m.

HYG030N03LQ1P/B Feature  30V/100A RDS(ON)=2.8mΩ(typ.)@VGS = 10V RDS(ON)=3.8mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead-

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