HYG042N10NS1P/B Feature 100V/160A RDS(ON)=3.5.
HUAYI
HYG042N10NS1P - N-Channel Enhancement Mode MOSFET
HYG042N10NS1P/B Feature 100V/160A RDS(ON)=3.5mΩ(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Avail.
