HYG045N10NS1B Datasheet | Specifications & PDF Download

HYG045N10NS1B N-Channel Enhancement Mode MOSFET

HYG045N10NS1P/B Feature  100V/160A RDS(ON)=3.8.

HYG045N10NS1P/B Feature  100V/160A RDS(ON)=3.8mΩ (typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avai

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