
HYG050N08NS1P (HUAYI)
N-Channel Enhancement Mode MOSFET
HYG050N08NS1P/B
Feature
80V/130A RDS(ON)= 4 mΩ(typ.)@VGS = 10V
100% Avalanche Tested Reliable and Rugged Lead-Free and Green DevicesAvailable
(22 views)