HYG050N08NS1P Datasheet | Specifications & PDF Download

HYG050N08NS1P N-Channel Enhancement Mode MOSFET

HYG050N08NS1P/B Feature  80V/130A RDS(ON)= 4 m.

HYG050N08NS1P/B Feature  80V/130A RDS(ON)= 4 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable

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