
HYG090N06LS1P (HUAYI)
N-Channel Enhancement Mode MOSFET
HYG090N06LS1P/B
N-Channel Enhancement Mode MOSFET
Feature
60V/62A RDS(ON)= 8.1mΩ (typ.) @ VGS = 10V RDS(ON)= 11.8 mΩ (typ.) @ VGS = 4.5V
100% Av
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