HYG180N10LS1C2 Datasheet | Specifications & PDF Download

HYG180N10LS1C2 N-Channel Enhancement Mode MOSFET Feature  100V/46A RDS(ON)=16.5mΩ (typ.) @ VGS = 10V RDS(ON)=20mΩ (typ.) @ VGS = 6V  100% Avalanch

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