
HYG200P10LR1P (HOOYI)
P-Channel Enhancement Mode MOSFET
HYG200P10LR1P/B
Feature
-100V/-80A RDS(ON)= 20 mΩ(typ.) @ VGS = -10V RDS(ON)= 24 mΩ(typ.) @ VGS = -4.5V
100% Avalanche Tested Reliable and Rugg
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