HYG400P10LR1P Datasheet | Specifications & PDF Download

HYG400P10LR1P/B Feature  -100V/-40A RDS(ON)= 42mΩ(typ.) @ VGS = -10V RDS(ON)= 48mΩ(typ.) @ VGS = -4.5V  100% Avalanche Tested  Reliable and Rugged

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HYG400P10LR1P/B P-Channel Enhancement Mode MOSFET Feature Pin Description  -100V/-40A RDS(ON)= 42mΩ(typ.) @ VGS = -10V RDS(ON)= 48mΩ(typ.) @ VG

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