HYG400P10LR1P - P-Channel Enhancement Mode MOSFET

HUAYI

General Description

TO-220FB-3L TO-263-2L Applications Portable equipment and battery powered systems DC-DC Converters

Motor control.

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HYG400P10LR1P p-channel enhancement mode mosfet by HUAYI - Datasheet Preview

Datasheet Details

Part number	HYG400P10LR1P
Manufacturer	HUAYI
File Size	1.27 MB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	HYG400P10LR1P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HYG400P10LR1P/B Feature  -100V/-40A RDS(ON)= 42mΩ(typ.) @ VGS = -10V RDS(ON)= 48mΩ(typ.) @ VGS = -4.5V  100% Avalanche Tested  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant) P-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Applications  Portable equipment and battery powered systems  DC-DC Converters  Motor control. Ordering and Marking Information P-Channel MOSFET P G400P10 XYMXXXXXX B G400P10 XYMXXXXXX Package Code P: TO-220FB-3L Date Code XYMXXXXXX B: TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.