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HYG400P10LR1D - P-Channel Enhancement Mode MOSFET

General Description

TO-252-2L TO-251-3L TO-251-3S Applications Portable equipment and battery powered systems DC-DC Converters

Motor control.

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Datasheet Details

Part number HYG400P10LR1D
Manufacturer HUAYI
File Size 1.36 MB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG400P10LR1D Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HYG400P10LR1D/U/V P-Channel Enhancement Mode MOSFET Feature  -100V/-40A RDS(ON)= 42mΩ(typ.) @ VGS = -10V RDS(ON)= 48mΩ(typ.) @ VGS = -4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description TO-252-2L TO-251-3L TO-251-3S Applications  Portable equipment and battery powered systems  DC-DC Converters  Motor control. Ordering and Marking Information D G400P10 XYMXXXXXX U G400P10 XYMXXXXXX V G400P10 XYMXXXXXX Package Code D: TO-252-2L V: TO-251-3S Date Code XYMXXXXXX P-Channel MOSFET U: TO-251-3L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.