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HYG400P10LR1V - P-Channel Enhancement Mode MOSFET

Download the HYG400P10LR1V datasheet PDF. This datasheet also covers the HYG400P10LR1D variant, as both devices belong to the same p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

TO-252-2L TO-251-3L TO-251-3S Applications Portable equipment and battery powered systems DC-DC Converters

Motor control.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HYG400P10LR1D-HUAYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HYG400P10LR1V
Manufacturer HUAYI
File Size 1.36 MB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG400P10LR1V Datasheet

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Other Datasheets by HUAYI

Part Number Description
HYG400P10LR1B P-Channel Enhancement Mode MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HYG400P10LR1D/U/V P-Channel Enhancement Mode MOSFET Feature  -100V/-40A RDS(ON)= 42mΩ(typ.) @ VGS = -10V RDS(ON)= 48mΩ(typ.) @ VGS = -4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description TO-252-2L TO-251-3L TO-251-3S Applications  Portable equipment and battery powered systems  DC-DC Converters  Motor control. Ordering and Marking Information D G400P10 XYMXXXXXX U G400P10 XYMXXXXXX V G400P10 XYMXXXXXX Package Code D: TO-252-2L V: TO-251-3S Date Code XYMXXXXXX P-Channel MOSFET U: TO-251-3L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.