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HWC34NC C-Band Power FET Non-Via Hole Chip Features • Low Cost GaAs Power FET • Class A or Class AB Operation • 8.5 dB Typical Gain at 4 GHz • 5V to

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HWS451 April 2005 V1 Features • Low Insertion Loss : 0.95 dB @ 2.5 GHz QFN12L (3 x 3 mm) 1.25 dB @ 5.8 GHz • Isolation: 26 dB @ 2.5 GHz 18 dB @ 5.

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HWS429 GaAs DC-3 GHz SPDT Terminated Switch October 2005 V2 Features • Low Insertion Loss : 0.40 dB @ 0.87 GHz QFN12L (3 x 3 mm) 0.50 dB @ 2.5 GHz

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Features • Low Insertion Loss: 0.45 dB @ 2.5 GHz • Isolation: 25 dB @ 2.5 GHz • Low DC Power Consumption • Low Cost SOT-363 Using Lead (Pb) free mater

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Features • Low Cost GaAs Power FET • Class A or Class AB Operation • 11 dB Typical Gain at 4 GHz • 5V to 10V Operation Description The HWC27NC is a m

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HWS421 GaAs DC-2.0 GHz SPDT High Power Switch September 2006 V2 Features • Low Insertion Loss : 0.40 dB @ 0.9 GHz • High Isolation: 28 dB @ 0.9 GHz •

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HWS450 GaAs 0.5-6 GHz SPDT Switch February 2009 V7 Features • Low Insertion Loss : 0.50 dB @ 2.7 GHz QFN12L (3 x 3 mm) 0.65 dB @ 5.8 GHz • Isolatio

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HWS454 GaAs 0.5-6 GHz DP4T Switch February 2009 V3 Features •Combination of 1 DPDT and 2 SPDT switches •Low Insertion Loss : 1.30 dB @ 2.50 GHz QFN1

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HWS503 GaAs 0.5-6GHz DPDT Switch January 2009 V1 Features • Low Insertion Loss : 0.6 dB @ 2.50 GHz USON6L (1.5x1.5) 0.9 dB @ 5.85 GHz • Isolation:

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Features • Low Insertion Loss: 0.4 dB @ 2.5 GHz 0.5 dB @ 5.8 GHz • Isolation: 24 dB @ 2.5 GHz 21 dB @ 5.8 GHz • Low DC Power Consumption • Miniature U

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Features • Low Cost GaAs Power FET • Class A or Class AB Operation • Greater than 14.5 dB Gain • 5V to 10V Operation Description The HWL34YRF is a Pow

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Features • Low Insertion Loss: 0.6 dB @ 2.5 GHz • High Isolation: 28 dB @ 5.8 GHz • Low control voltage: 1.3 to 3.3 V • No external DC blocking capaci

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HWS407 March 2004 V3 Features • Low Insertion Loss : • • • • QFN12L (3 x 3 mm) 0.7 dB @ 2.5 GHz 0.9 dB @ 4.9 to 6.0 GHz Isolation: 25 dB @ 2.5 GHz

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Features • Low Insertion Loss: 0.50 dB @ 2.5 GHz 0.75 dB @ 5.8 GHz • Isolation: 25.0 dB @ 2.5 GHz 28.0 dB @ 5.8 GHz • Low DC Power Consumption • Minia

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Features • Low Cost GaAs Power FET • Class A or Class AB Operation • Greater than 17 dB Gain • 5V to 10V Operation Description The HWL27YRA is a Medi

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Features • Low Cost GaAs Power FET • Class A or Class AB Operation • Typical 16.5 dB Gain • 5V to 10V Operation Description The HWL30YRA is a Medium P

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HWS410 GaAs DC-6 GHz DPDT Switch September 2006 V3 Features • Low Insertion Loss : 0.8 dB @ 2.50 GHz • • • • • QFN12L (3 x 3 mm) 1.0 dB @ 5.85 GHz

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HWS434 GaAs DC-2.5 GHz SPDT Terminated Switch September 2006 V2 Features • Low Insertion Loss : 0.70 dB @ 2 GHz • High Isolation: 34 dB @ 2 GHz • Low

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HWS443 GaAs DC-2.5 GHz SPDT Switch September 2006 V2 Features • Low Insertion Loss: 0.35 dB @ 2 GHz • Isolation: 26 dB @ 2 GHz • P1dB: +25 dBm Typica

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HWS486 GaAs DC-6 GHz SPDT Terminated Switch Feb. 2007, V3 Features • Low Insertion Loss : 0.50 dB @ 2.7 GHz ETSLP (1.5x1.5) 0.60 dB @ 5.8 GHz • Iso

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