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13 Hits
• Hyperfast Recovery trr = 45 ns (@ IF = 30 A) • Max Forward Voltage, VF = 2.1 V (@ TC = 25°C) • 400 V, 600 V Reverse Voltage and High Reliability • ...
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11 Hits
• Hyperfast Recovery trr = 85 ns (@ IF = 30 A) • Max Forward Voltage, VF = 3.2 V (@ TC = 25°C) • 1200 V Reverse Voltage and High Reliability • Avalan...
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10 Hits
of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar trans...
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10 Hits
• • • • • Hyperfastfast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature Single Diode Device
trr = 28n...
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10 Hits
• Hyperfast Recovery trr = 40 ns (@ IF = 15 A) • Max Forward Voltage, VF = 2.1 V (@ TC = 25°C) • 400 V, 600 V Reverse Voltage and High Reliability • ...
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9 Hits
of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. ...
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9 Hits
• Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current
VS-ETH3006S-M3
Base cathode 2
VS-E...
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9 Hits
• Hyperfast Recovery Time • Low Forward Voltage Drop • Low Leakage Current • 175°C Operating Junction Temperature • Dual Diode Center Tap • Lead-Free ...
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9 Hits
• Hyperfast and optimized Qrr • Best in class forward voltage drop and switching
losses trade off
• Optimized for high speed operation
• 175 °C maximu...
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8 Hits
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transist...
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8 Hits
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. ...
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