IC-HBT Datasheet | Specifications & PDF Download

Amplifiers - Linear & Power - SMT HMC406MS8G / 406MS8GE v06.0611 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz Typical Applications The HMC406MS8

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C O N F I D E N T I A L MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW
  This general purpose amplifier i

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HMC414MS8G / 414MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz 11 Typical Applications This amplifier is ideal for use as a pow

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www.DataSheet4U.com TM ® LX5511 InGaP HBT 2.3 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES Advanced InGaP HBT 2.3-2

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DC-6.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier May 2006 - Rev 23-May-06 CGB7003-SC (-BD) Features Low Operating Voltage: 5V 31.

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HMC413QS16G / 413QS16GE v04.0505 GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz LINEAR & POWER AMPLIFIERS - SMT 11 Typical Applications This

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FREQUENCY DIVIDERS & DETECTORS - SMT v04.0410 Typical Applications 4 Prescaler for DC to C Band PLL Applications: • UNII, Point-to-Point & VSAT Radio

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CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB241 GaAs Power Amplifier MMIC has been especially developed

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Product Description NGA-489 Sirenza Microdevices’ NGA-489 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed

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Transistors MSG36E41 SiGe HBT type For low-noise RF amplifier ■ Features • Compatible between high breakdown voltage and high cut-off frequency • Low

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v03.0109 HMC397 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 2 - 14 Typical Applications Features An

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CHA8100 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description The CHA8100 chip is a monolithic twostage high powe

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Preliminary CGB-1089Z Product Description Sirenza Microdevices’ CGB-1089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington confi

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Product Description The SGA-3386 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high F

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Mitsubishi Semiconductors Preliminary Specifications are subject to change without notice. MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE Outline Draw

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Product Description Stanford Microdevices’ NGA-689 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed w

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MITSUBISHI SEMICONDUCTOR BA01207 Specifications are subject to change without notice. GaAs HBT HYBRID IC DESCRIPTION The BA01207 GaAs RF

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MP03XXX360 MP03XXX360 Dual Thyristor, Thyristor/Diode Module Replaces June 2001 version, DS4484-6.1 FEATURES s Dual Device Module s Electrically Iso

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FREQUENCY DIVIDERS & DETECTORS - SMT HMC362S8G / 362S8GE v04.0919 SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 12 GHz Typical Applications 6 Prescaler fo

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