CGB240 2-Stage Bluetooth InGaP HBT Power Amplifier

TriQuint Semiconductor

Description

CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier .
The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.

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Datasheet Specifications

Part number: CGB240
Manufacturer: TriQuint Semiconductor
File Size: 320.94 KB
Datasheet: CGB240_TriQuintSemiconductor.pdf
Description: 2-Stage Bluetooth InGaP HBT Power Amplifier

Features

* Single voltage supply.
* Wide operating voltage range 2.0 - 5.5 V.
* POUT = 23 dBm at VC = 3.2 V.
* Overall power added efficiency (PAE) typically 50%.
* High PAE at low
* power mode.
* Analog power control with four power steps.
* Str

Applications

* in the 2.4 - 2.5 GHz ISM band (e. g. Bluetooth class 1). Its high power added efficiency and single positive supply operation makes the device ideally suited to handheld applications. The device delivers 23 dBm output power at a supply voltage of 3.2 V, with an overall PAE of 50%. The output power ca

CGB240 Distributors

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CGB240 2-Stage Bluetooth InGaP HBT Power Amplifier TriQuint Semiconductor

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