CGB241 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier

TriQuint Semiconductor

Description

CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier .
The CGB241 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.

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Datasheet Specifications

Part number: CGB241
Manufacturer: TriQuint Semiconductor
File Size: 392.85 KB
Datasheet: CGB241-TriQuintSemiconductor.pdf
Description: 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier

Features

* 2-stage Bluetooth InGaP HBT power amplifier
* Single voltage supply
* Wide operating voltage range 2.0 - 5.5 V
* POUT = 22.5 dBm at VC = 3.2 V
* Overall power added efficiency ( PAE ) typically 50%
* Analog power control with four power steps

Applications

* in the 2.4 - 2.5 GHz ISM band (e. g. Bluetooth class 1, or IEEE 802.11b). Its high power added efficiency (typically 50%) and single positive supply operation makes the device ideally suited to handheld applications. The device delivers 22.5 dBm output power at a supply voltage of 3.2 V, with an over

CGB241 Distributors

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CGB241 2-Stage Bluetooth WLAN InGaP HBT Power Amplifier TriQuint Semiconductor

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