IGBT-Modules Datasheet | Specifications & PDF Download

Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/8

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Technische Information / Technical Information IGBT-Module IGBT-Modules BSM50GP120 Elektrische Eigenschaften / Electrical properties Höchstzulässige

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MITSUBISHI IGBT MODULES CM150DU-24F HIGH POWER SWITCHING USE CM150DU-24F ¡IC 15

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www.DataSheet4U.com DIM200MHS12-A000 DIM200MHS12-A000 Half Bridge IGBT Module Replaces June 2002, version DS5535-2.1 DS5535-3.0 March 2003 FEATURES

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CM600DX-24T/CM600DXP-24T HIGH POWER SWITCHING USE INSULATED TYPE DX DXP dual switch (half-bridge) Collector current IC …

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CM450C1Y-24T HIGH POWER SWITCHING USE INSULATED TYPE dual switch (Collector-common) Collector current IC …

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MII 300-12 A4 MID 300-12 A4 MDI 300-12 A4 IGBT Modules Short Circuit SOA Capability Square RBSOA MII 3 IC25 = 330 A VCES = 1200 V VCE(sat) typ. = 2

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CM35MX-24A MITSUBISHI IGBT MODULES CM35MX-24A HIGH POWER SWITCHING USE ¡IC 35A

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MWI 100-12 E8 MKI 100-12 E8 IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13, 21 1 2 5 6 9 10 19 17 15 13, 21 1 2 9 10 19

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CM300DX-24T/CM300DXP-24T HIGH POWER SWITCHING USE INSULATED TYPE Collector current IC … … 3 0 0 A Col

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MWI 100-12 E8 MKI 100-12 E8 IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13, 21 1 2 5 6 9 10 19 17 15 13, 21 1 2 9 10 19

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CM200TX-24T/CM200TXP-24T HIGH POWER SWITCHING USE INSULATED TYPE TX TXP sixpack (three-phase bridge) Collector current IC

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< HVIGBT MODULES > CM750HG-130R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

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DESCRIPTION VLA500-02R is a hybrid integrated circuit designed for driving n-channel IGBT modules in any gate-amplifier application. This device inclu

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MITSUBISHI IGBT MODULES CM300DU-12H HIGH POWER SWITCHING USE INSULATED TYPE TC Measured Point A D F S(4 - Mounting Holes) H B E T CM U J H 3 - M6

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< HVIGBT MODULE > CMH1200DC-34S HIGH POWER SWITCHING USE INSULATED TYPE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module

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www.DataSheet4U.com MWI 15-12 A7 IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 IC25 = 30 A = 1200 V VCES VCE(sat) typ. = 2.0 V

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www.DataSheet4U.com MITSUBISHI IGBT MODULES CM400DY-34A HIGH POWER SWITCHING USE CM400DY-34A ¡IC

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www.DataSheet4U.com MITSUBISHI IGBT MODULES CM100DU-24H HIGH POWER SWITCHING USE INSULATED TYPE TC Measured Point E F G E2 A B H J D C G2 G2 U C1

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