mTM1J~~~ Insulated Gate Bipolar Transistor IGT4D1.
GE
IGT4E10 - Insulated Gate Bipolar Transistor
mTM1J~~~ Insulated Gate Bipolar Transistor IGT4D1 O,E~ ~Jr 10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 il This IGT"" Transistor (Insulated Gate .
