GE
IGT4E10 - Insulated Gate Bipolar Transistor
mTM1J~~~
Insulated Gate Bipolar Transistor
IGT4D1 O,E~ ~Jr
10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 il
This IGT Transistor (Insulated Gate
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mTM1J~~~ Insulated Gate Bipolar Transistor IGT4D1.
GE
IGT4E10 Distributor
