IGT4E10, IGT4D10 Insulated Gate Bipolar Transistor

Description

mTM1J~~~ Insulated Gate Bipolar Transistor IGT4D1 O,E~ ~Jr 10 AMPERES 400, 500 VOLTS EQUIV.RDS(ON) = 0.27 il This IGT"" Transistor (Insulated Gate .

📥 Download Datasheet

IGT4E10 Datasheet Preview — This datasheet PDF includes multiple part numbers: IGT4E10, IGT4D10. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IGT4E10, IGT4D10
Manufacturer: GE
File Size: 308.85 KB
Datasheet: IGT4D10-GE.pdf
Description: Insulated Gate Bipolar Transistor
Note: This datasheet PDF includes multiple part numbers: IGT4E10, IGT4D10.
Please refer to the document for exact specifications by model.

Features

* Low VCE(SAT) - 2.5V typ @ 10A
* Ultra-fast turn-on -150 ns typical
* Polysilicon MOS gate - Voltage controlled turn on/off
* High current handling -10 amps @ 100°C N-CHANNEl c . ~ CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS) . - - . I :1~g::~~II~

IGT4E10 Distributors

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IGT4D10 Insulated Gate Bipolar Transistor GE

GE IGT4E10-like datasheet