IGT4E10, IGT4D10 Datasheet - GE

IGT4E10 Insulated Gate Bipolar Transistor

mTM1J~~~ Insulated Gate Bipolar Transistor IGT4D1 O,E~ ~Jr 10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 il This IGT"" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolar transistors. The device design and gate characteristics of the IGT"M Tr.

IGT4E10 Features

* Low VCE(SAT) - 2.5V typ @ 10A

* Ultra-fast turn-on -150 ns typical

* Polysilicon MOS gate - Voltage controlled turn on/off

* High current handling -10 amps @ 100°C N-CHANNEl c .~ CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS) . - - .I :1~g::~~II~

IGT4D10-GE.pdf