IGT4E10 Datasheet, Transistor, GE

IGT4E10 Features

• Transistor
• Low VCE(SAT) - 2.5V typ @ 10A
• Ultra-fast turn-on -150 ns typical
• Polysilicon MOS gate - Voltage controlled turn on/off
• High current handling -10

PDF File Details

Part number:

IGT4E10

Manufacturer:

GE

File Size:

308.85kb

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📄 Datasheet

Description:

Insulated gate bipolar transistor.

IGT4E10 Application

• Applications operating at low frequencies and where low conduction losses are essential, such as; AC and DC motor controls, power supplies and drive

TAGS

IGT4E10

GE

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