Datasheet Details
- Part number
- IGT6D11
- Manufacturer
- GE
- File Size
- 289.09 KB
- Datasheet
- IGT6D11-GE.pdf
- Description
- Insulated Gate Bipolar Transistor
IGT6D11 Description
mTMlJ~~~ Insulated Gate Bipolar Transistor IGT6D11,E11 10 AMPERES 400, 500 VOLTS EQUIV.ROS(ON) =0.27 il This IGT'II Transistor (Insulated Gate Bipo.
IGT6D11 Features
* Low VCE(SAT) - 2.5V typ @ 10A
* Ultra-fast turn-on -100 ns typical
* Polysilicon MOS gate - Voltage controlled turn on/off
* High current handling - 10 amps @ 100°C
N-CHANNEL
c
. ~
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0845(2147J
0
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