IGT6D11 Datasheet (GE) - Insulated Gate Bipolar Transistor

IGT6D11, Insulated Gate Bipolar Transistor

mTMlJ~~~ Insulated Gate Bipolar Transistor IGT6D11,E11 10 AMPERES 400, 500 VOLTS EQUIV.

ROS(ON) =0.27 il This IGT'II Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors.

The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolar transistors.

The device design and gate characteristics of the IGT'II Trans

IGT6D11 Features

* Low VCE(SAT) - 2.5V typ @ 10A

* Ultra-fast turn-on -100 ns typical

* Polysilicon MOS gate - Voltage controlled turn on/off

* High current handling - 10 amps @ 100°C N-CHANNEL c .~ CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0845(2147J 0