IGT6E11 Datasheet, Transistor, GE

IGT6E11 Features

  • Transistor
  • Low VCE(SAT) - 2.5V typ @ 10A
  • Ultra-fast turn-on -100 ns typical
  • Polysilicon MOS gate - Voltage controlled turn on/off
  • High current handling - 1

PDF File Details

Part number:

IGT6E11

Manufacturer:

GE

File Size:

289.09kb

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📄 Datasheet

Description:

Insulated gate bipolar transistor.

Datasheet Preview: IGT6E11 📥 Download PDF (289.09kb)
Page 2 of IGT6E11 Page 3 of IGT6E11

IGT6E11 Application

  • Applications operating at low frequencies and where low conduction losses are essential, such as; AC and DC motor controls, power supplies and drive

TAGS

IGT6E11
Insulated
Gate
Bipolar
Transistor
GE

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