* Low VCE(SAT) - 2.5V typ @ 10A
* Ultra-fast turn-on -100 ns typical
* Polysilicon MOS gate - Voltage controlled turn on/off
* High current handling - 10 amps @ 100°C N-CHANNEL c .~ CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0845(2147J 0
IGT6E11
GE
289.09 KB
Insulated gate bipolar transistor.
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Insulated Gate Bipolar Transistor
IGT6D11,E11
10 AMPERES 400, 500 VOLTS
EQUIV. ROS(ON) =0.27 il
This IGT'II Transistor (Insulated Gate Bipo.
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