IGT6E11, IGT6D11 Insulated Gate Bipolar Transistor

Description

mTMlJ~~~ Insulated Gate Bipolar Transistor IGT6D11,E11 10 AMPERES 400, 500 VOLTS EQUIV.ROS(ON) =0.27 il This IGT'II Transistor (Insulated Gate Bipo.

📥 Download Datasheet

IGT6E11 Datasheet Preview — This datasheet PDF includes multiple part numbers: IGT6E11, IGT6D11. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IGT6E11, IGT6D11
Manufacturer: GE
File Size: 289.09 KB
Datasheet: IGT6D11-GE.pdf
Description: Insulated Gate Bipolar Transistor
Note: This datasheet PDF includes multiple part numbers: IGT6E11, IGT6D11.
Please refer to the document for exact specifications by model.

Features

* Low VCE(SAT) - 2.5V typ @ 10A
* Ultra-fast turn-on -100 ns typical
* Polysilicon MOS gate - Voltage controlled turn on/off
* High current handling - 10 amps @ 100°C N-CHANNEL c . ~ CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0845(2147J 0

IGT6E11 Distributors

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IGT6D11 Insulated Gate Bipolar Transistor GE

GE IGT6E11-like datasheet