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IGT6E11, IGT6D11 Datasheet - GE

IGT6E11 Insulated Gate Bipolar Transistor

mTMlJ~~~ Insulated Gate Bipolar Transistor IGT6D11,E11 10 AMPERES 400, 500 VOLTS EQUIV. ROS(ON) =0.27 il This IGT'II Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolar transistors. The device design and gate characteristics of the IGT'II Trans.

IGT6E11 Features

* Low VCE(SAT) - 2.5V typ @ 10A

* Ultra-fast turn-on -100 ns typical

* Polysilicon MOS gate - Voltage controlled turn on/off

* High current handling - 10 amps @ 100°C N-CHANNEL c .~ CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0845(2147J 0

IGT6D11-GE.pdf

This datasheet PDF includes multiple part numbers: IGT6E11, IGT6D11. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IGT6E11, IGT6D11

Manufacturer:

GE

File Size:

289.09 KB

Description:

Insulated gate bipolar transistor.

Note:

This datasheet PDF includes multiple part numbers: IGT6E11, IGT6D11.
Please refer to the document for exact specifications by model.

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IGT6E11 IGT6D11 Insulated Gate Bipolar Transistor GE

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