IGT6E20, IGT6D20 Insulated Gate Bipolar Transistor

Description

mTMIT~~~ insulated Gate Bipolar Transistor IGT6D20,E20 20 AMPERES 400, 500 VOLTS EQUIV.RDS(ON) = 0.12 n This IGT'M Transistor (Insulated Gate Bipol.

📥 Download Datasheet

IGT6E20 Datasheet Preview — This datasheet PDF includes multiple part numbers: IGT6E20, IGT6D20. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IGT6E20, IGT6D20
Manufacturer: GE
File Size: 294.88 KB
Datasheet: IGT6D20-GE.pdf
Description: Insulated Gate Bipolar Transistor
Note: This datasheet PDF includes multiple part numbers: IGT6E20, IGT6D20.
Please refer to the document for exact specifications by model.

Features

* Low VCE(SAT) - 2.3V typ @ 20A " Ultra-fast turn-on - 200 ns typical
* Polysilicon MOS gate - Voltage controlled turn on/off e High current handling - 20 amps @ 100°C N-CHANNEL c . ~ r: a CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0.645(21.471 MAX

IGT6E20 Distributors

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IGT6D20 Insulated Gate Bipolar Transistor GE

GE IGT6E20-like datasheet