IGT6E20 Datasheet - GE

IGT6E20 Insulated Gate Bipolar Transistor

mTMIT~~~ insulated Gate Bipolar Transistor IGT6D20,E20 20 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.12 n This IGT'M Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolar transistors. The device design and gate characteristics of the IGT'M Transis.

IGT6E20 Features

* Low VCE(SAT) - 2.3V typ @ 20A " Ultra-fast turn-on - 200 ns typical

* Polysilicon MOS gate - Voltage controlled turn on/off e High current handling - 20 amps @ 100°C N-CHANNEL c .~ r: a CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0.645(21.471 MAX

IGT6E20 Datasheet (294.88 KB)