Datasheet4U Logo Datasheet4U.com

IGT6E20, IGT6D20 Datasheet - GE

IGT6D20-GE.pdf

This datasheet PDF includes multiple part numbers: IGT6E20, IGT6D20. Please refer to the document for exact specifications by model.
IGT6E20 Datasheet Preview Page 2 IGT6E20 Datasheet Preview Page 3

Datasheet Details

Part number:

IGT6E20, IGT6D20

Manufacturer:

GE

File Size:

294.88 KB

Description:

Insulated gate bipolar transistor.

Note:

This datasheet PDF includes multiple part numbers: IGT6E20, IGT6D20.
Please refer to the document for exact specifications by model.

IGT6E20, IGT6D20, Insulated Gate Bipolar Transistor

mTMIT~~~ insulated Gate Bipolar Transistor IGT6D20,E20 20 AMPERES 400, 500 VOLTS EQUIV.

RDS(ON) = 0.12 n This IGT'M Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors.

The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolar transistors.

The device design and gate characteristics of the IGT'M Transis

IGT6E20 Features

* Low VCE(SAT) - 2.3V typ @ 20A " Ultra-fast turn-on - 200 ns typical

* Polysilicon MOS gate - Voltage controlled turn on/off e High current handling - 20 amps @ 100°C N-CHANNEL c .~ r: a CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0.645(21.471 MAX

📁 Related Datasheet

📌 All Tags

GE IGT6E20-like datasheet