* Enhancement mode transistor ‑ Normally OFF switch
* Ultra fast switching
* No reverse‑recovery charge
* Capable of reverse conduction
* Low gate charge, low output charge
* Superior commutation ruggedness
* ESD (HBM/CDM) JEDEC standards Benef
IGT65R025D2 Datasheet (1.16 MB)
IGT65R025D2
1.16 MB
Power transistor.
Public IGT65R025D2 Target datasheet CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor Infineon’s CoolGaN™ is a highly efficient GaN (gal.
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