Datasheet4U Logo Datasheet4U.com

IGT6D21

Insulated Gate Bipolar Transistor

IGT6D21 Features

* Low VCE(SAT) - 2.5Vtyp@20A

* Ultra-fast turn-on -150 ns typical

* Polysilicon MOS gate - Voltage controlled turn on/off

* High current handling - 20 amps @ 900 C N-CHANNEl c o~ E CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0845121.471

IGT6D21 Datasheet (280.29 KB)

Preview of IGT6D21 PDF

Datasheet Details

Part number:

IGT6D21

Manufacturer:

GE

File Size:

280.29 KB

Description:

Insulated gate bipolar transistor.
mTMlJ~~~ Insulated Gate Bipolar Transistor IGT6D21,E21 20 AMPERES 400, 500 VOLTS EQUIV. ROS(ON) = 0.145 0 This IGT'- Transistor (Insulated Gate Bipo.

📁 Related Datasheet

IGT6D20 Insulated Gate Bipolar Transistor (GE)

IGT6D10 Insulated Gate Bipolar Transistor (GE)

IGT6D11 Insulated Gate Bipolar Transistor (GE)

IGT60R042D1 Power Transistor (Infineon)

IGT60R070D1 600V enhancement-mode Power Transistor (Infineon)

IGT60R190D1 Power Transistor (Infineon)

IGT60R190D1S 600V enhancement-mode Power Transistor (Infineon)

IGT65R025D2 Power Transistor (Infineon)

IGT65R035D2 Power Transistor (Infineon)

IGT65R045D2 Power Transistor (Infineon)

TAGS

IGT6D21 Insulated Gate Bipolar Transistor GE

Image Gallery

IGT6D21 Datasheet Preview Page 2 IGT6D21 Datasheet Preview Page 3

IGT6D21 Distributor