Datasheet4U Logo Datasheet4U.com

IGT6D20

Insulated Gate Bipolar Transistor

IGT6D20 Features

* Low VCE(SAT) - 2.3V typ @ 20A " Ultra-fast turn-on - 200 ns typical

* Polysilicon MOS gate - Voltage controlled turn on/off e High current handling - 20 amps @ 100°C N-CHANNEL c .~ r: a CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0.645(21.471 MAX

IGT6D20 Datasheet (294.88 KB)

Preview of IGT6D20 PDF

Datasheet Details

Part number:

IGT6D20

Manufacturer:

GE

File Size:

294.88 KB

Description:

Insulated gate bipolar transistor.
mTMIT~~~ insulated Gate Bipolar Transistor IGT6D20,E20 20 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.12 n This IGT'M Transistor (Insulated Gate Bipol.

📁 Related Datasheet

IGT6D21 Insulated Gate Bipolar Transistor (GE)

IGT6D10 Insulated Gate Bipolar Transistor (GE)

IGT6D11 Insulated Gate Bipolar Transistor (GE)

IGT60R042D1 Power Transistor (Infineon)

IGT60R070D1 600V enhancement-mode Power Transistor (Infineon)

IGT60R190D1 Power Transistor (Infineon)

IGT60R190D1S 600V enhancement-mode Power Transistor (Infineon)

IGT65R025D2 Power Transistor (Infineon)

IGT65R035D2 Power Transistor (Infineon)

IGT65R045D2 Power Transistor (Infineon)

TAGS

IGT6D20 Insulated Gate Bipolar Transistor GE

Image Gallery

IGT6D20 Datasheet Preview Page 2 IGT6D20 Datasheet Preview Page 3

IGT6D20 Distributor