Datasheet4U Logo Datasheet4U.com

IGT60R190D1 - Power Transistor

IGT60R190D1 Description

IGT60R190D1 IGT60R190D1 600V CoolGaN™ enhancement-mode Power Transistor .

IGT60R190D1 Features

* Enhancement mode transistor
* Normally OFF switch
* Ultra fast switching
* No reverse-recovery charge
* Capable of reverse conduction
* Low gate charge, low output charge
* Superior commutation ruggedness

IGT60R190D1 Applications

* according to JEDEC Standards (JESD47 and JESD22) 1 SK G G SK 1 Benefits
* Improves system efficiency
* Improves power density
* Enables higher operating frequency
* System cost reduction savings
* Reduces EMI Gate Drain Kelvin Source Source 8 drain contact 7 1,2,3,4,5,6 App

📥 Download Datasheet

Preview of IGT60R190D1 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IGT6D10 - Insulated Gate Bipolar Transistor (GE)
  • IGT6D11 - Insulated Gate Bipolar Transistor (GE)
  • IGT6D20 - Insulated Gate Bipolar Transistor (GE)
  • IGT6D21 - Insulated Gate Bipolar Transistor (GE)
  • IGT6E10 - Insulated Gate Bipolar Transistor (GE)
  • IGT6E11 - Insulated Gate Bipolar Transistor (GE)
  • IGT6E20 - Insulated Gate Bipolar Transistor (GE)
  • IGT6E21 - Insulated Gate Bipolar Transistor (GE)

📌 All Tags

Power Transistor Infineon
Infineon IGT60R190D1-like datasheet