IGT6E10, IGT6D10 Insulated Gate Bipolar Transistor

Description

mTMlJ~~~ Insulated Gate Bipolar Transistor Preliminary 26.4 4/85 IGT6D10,E10 10 AMPERES 400, 500 VOLTS EQUIV.RDS(ON) = 0.27 n This IGT'II Transisto.

📥 Download Datasheet

IGT6E10 Datasheet Preview — This datasheet PDF includes multiple part numbers: IGT6E10, IGT6D10. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IGT6E10, IGT6D10
Manufacturer: GE
File Size: 291.90 KB
Datasheet: IGT6D10-GE.pdf
Description: Insulated Gate Bipolar Transistor
Note: This datasheet PDF includes multiple part numbers: IGT6E10, IGT6D10.
Please refer to the document for exact specifications by model.

Features

* Low VCE(SAT) - 2.5V typ @ 10A
* Ultra-fast turn-on - 150 ns typical
* Polysilicon MOS gate - Voltage controlled turn onloff
* High current handling -10 amps @ 100°C N-CHANNEL c . ~ CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) ~~~
* -

IGT6E10 Distributors

📁 Related Datasheet

IGT60R042D1 IGT60R070D1 IGT60R190D1 IGT60R190D1S IGT65R025D2 IGT65R035D2

📌 All Tags

IGT6D10 Insulated Gate Bipolar Transistor GE

GE IGT6E10-like datasheet