IGT6E21, IGT6D21 Insulated Gate Bipolar Transistor

Description

mTMlJ~~~ Insulated Gate Bipolar Transistor IGT6D21,E21 20 AMPERES 400, 500 VOLTS EQUIV.ROS(ON) = 0.145 0 This IGT'- Transistor (Insulated Gate Bipo.

📥 Download Datasheet

IGT6E21 Datasheet Preview — This datasheet PDF includes multiple part numbers: IGT6E21, IGT6D21. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IGT6E21, IGT6D21
Manufacturer: GE
File Size: 280.29 KB
Datasheet: IGT6D21-GE.pdf
Description: Insulated Gate Bipolar Transistor
Note: This datasheet PDF includes multiple part numbers: IGT6E21, IGT6D21.
Please refer to the document for exact specifications by model.

Features

* Low VCE(SAT) - 2.5Vtyp@20A
* Ultra-fast turn-on -150 ns typical
* Polysilicon MOS gate - Voltage controlled turn on/off
* High current handling - 20 amps @ 900 C N-CHANNEl c o~ E CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0845121.471

IGT6E21 Distributors

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IGT6D21 Insulated Gate Bipolar Transistor GE

GE IGT6E21-like datasheet