Datasheet Details
Part number:
IGT6E21, IGT6D21
Manufacturer:
GE
File Size:
280.29 KB
Description:
Insulated gate bipolar transistor.
Note:
This datasheet PDF includes multiple part numbers: IGT6E21, IGT6D21.
Please refer to the document for exact specifications by model.
IGT6E21, IGT6D21, Insulated Gate Bipolar Transistor
mTMlJ~~~ Insulated Gate Bipolar Transistor IGT6D21,E21 20 AMPERES 400, 500 VOLTS EQUIV.
ROS(ON) = 0.145 0 This IGT'- Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors.
The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolar transistors.
The device design and gate characteristics ofthe IGT'- Transis
IGT6E21 Features
* Low VCE(SAT) - 2.5Vtyp@20A
* Ultra-fast turn-on -150 ns typical
* Polysilicon MOS gate - Voltage controlled turn on/off
* High current handling - 20 amps @ 900 C N-CHANNEl c o~ E CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0845121.471
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