* Low VCE(SAT) - 2.5Vtyp@20A
* Ultra-fast turn-on -150 ns typical
* Polysilicon MOS gate - Voltage controlled turn on/off
* High current handling - 20 amps @ 900 C N-CHANNEl c o~ E CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0845121.471
IGT6E21
GE
280.29 KB
Insulated gate bipolar transistor.
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Insulated Gate Bipolar Transistor
IGT6D21,E21
20 AMPERES 400, 500 VOLTS EQUIV. ROS(ON) = 0.145 0
This IGT'- Transistor (Insulated Gate Bipo.
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