IGT60R190D1S 600V enhancement-mode Power Transistor

Infineon

Description

IGT60R190D1S IGT60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor .

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Datasheet Specifications

Part number: IGT60R190D1S
Manufacturer: Infineon ↗
File Size: 564.52 KB
Datasheet: IGT60R190D1S-Infineon.pdf
Description: 600V enhancement-mode Power Transistor

Features

* Enhancement mode transistor
* Normally OFF switch
* Ultra fast switching
* No reverse-recovery charge
* Capable of reverse conduction
* Low gate charge, low output charge
* Superior commutation ruggedness

Applications

* according to JEDEC standards Benefits
* Improves system efficiency
* Improves power density
* Enables higher operating frequency
* System cost reduction savings
* Reduces EMI G G SK 1 1 SK SK G 1 1 Gate Drain Kelvin Source Source 8 drain contact 7 1,2,3,4,5,6 Applications

IGT60R190D1S Distributors

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IGT60R190D1S 600V enhancement-mode Power Transistor Infineon

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