enhancement-mode Datasheet | Specifications & PDF Download

MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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http://www.ncepower.com Pb Free Product NCE4688 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4688 uses advanced trench technolog

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RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

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XP15NA9R3CXT Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Low On-resistance ▼

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C440E3 Issued Date : 2009.02.23 Revised Date : Page No. : 1/6 MTN1308E

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VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number VP0300B VP0300L VP0300M VQ2001J VQ2001P V(BR)DSS M

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Gr Pr STU/D601S Sa mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.2 PRODUCT SUMMARY VDSS ID R

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http://www.ncepower.com Pb Free Product NCE8290 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290 uses advanced trench technology

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Description AP80N03D 30V N-Channel Enhancement Mode MOSFET The AP80N03D uses advanced trench technology to provide excellent RDS(ON), low gate charg

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HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS

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BSS138K 50V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 50V RDS(ON) Max 3.5Ω @ VGS = 10V ID Max TA = +25°C 0.31A Description and Appl

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WTM2306 N-Channel Enhancement Mode Power MOSFET Description ■ The WTM2306 uses advanced trench technology to provide excellent RDS(ON), This device is

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AP85T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low Gate Charge www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE POWER MOSFET D

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Part no. ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) (Ω) 0.200 @ VGS= 4.5

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CYStech Electronics Corp. Spec. No. : C999H8 Issued Date : 2015.03.10 Revised Date : 2020.02.25 Page No. : 1/10 N-Channel Logic Level Enhancement Mo

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WTM2305 P-Channel Enhancement Mode Power MOSFET Description ■ The WTM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charg

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www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.Data

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