Datasheet Details
- Part number
- G05NP10S
- Manufacturer
- GOFORD
- File Size
- 571.03 KB
- Datasheet
- G05NP10S-GOFORD.pdf
- Description
- N- and P-Channel Enhancement Mode Power MOSFET
G05NP10S Description
GOFORD G05NP10S N and P Channel Enhancement Mode Power MOSFET .
This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.
G05NP10S Features
* NMOS
* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
100V 5A < 170mΩ
< 180mΩ
Schematic diagram
* PMOS
* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
-100V -6A < 200mΩ
* 100% Avalanche Tested
* RoHS Compliant
Marki
📁 Related Datasheet
📌 All Tags
G05NP10S Stock/Price