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G05NP10 - N- and P-Channel Enhancement Mode Power MOSFET

Download the G05NP10 datasheet PDF. This datasheet also covers the G05NP10S variant, as both devices belong to the same n- and p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Key Features

  • NMOS.
  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V) 100V 5A < 170mΩ < 180mΩ Schematic diagram.
  • PMOS.
  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V) -100V -6A < 200mΩ.
  • 100% Avalanche Tested.
  • RoHS Compliant Marking and pin assignment.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G05NP10S-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G05NP10
Manufacturer GOFORD
File Size 571.03 KB
Description N- and P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G05NP10 Datasheet

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Other Datasheets by GOFORD

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G05NP10S N- and P-Channel Enhancement Mode Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GOFORD G05NP10S N and P Channel Enhancement Mode Power MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ⚫ NMOS ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 10V) ⚫ RDS(ON) (at VGS = 4.