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G05NP10 Datasheet N- And P-channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

Overview: GOFORD G05NP10S N and P Channel Enhancement Mode Power MOSFET.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number G05NP10
Manufacturer GOFORD
File Size 571.03 KB
Description N- and P-Channel Enhancement Mode Power MOSFET
Datasheet G05NP10 G05NP10S Datasheet (PDF)

General Description

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

General

Key Features

  • NMOS.
  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V) 100V 5A < 170mΩ < 180mΩ Schematic diagram.
  • PMOS.
  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V) -100V -6A < 200mΩ.
  • 100% Avalanche Tested.
  • RoHS Compliant Marking and pin assignment.

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