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G05NP10S - N- and P-Channel Enhancement Mode Power MOSFET

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G05NP10S N- and P-Channel Enhancement Mode Power MOSFET by GOFORD - Datasheet Preview — Datasheet preview – G05NP10S

Datasheet Details

Part number	G05NP10S
Manufacturer	GOFORD
File Size	571.03 KB
Description	N- and P-Channel Enhancement Mode Power MOSFET
Datasheet	G05NP10S Datasheet
Additional preview pages of the G05NP10S datasheet.

Product details

Description

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

Features

NMOS.
VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 10V).
RDS(ON) (at VGS = 4.5V) 100V 5A < 170mΩ < 180mΩ Schematic diagram.
PMOS.
VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 10V) -100V -6A < 200mΩ.
100% Avalanche Tested.
RoHS Compliant Marking and pin assignment.

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Published: Nov 6, 2024 |