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G05NP10S - N- and P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features

  • NMOS.
  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V) 100V 5A < 170mΩ < 180mΩ Schematic diagram.
  • PMOS.
  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V) -100V -6A < 200mΩ.
  • 100% Avalanche Tested.
  • RoHS Compliant Marking and pin assignment.

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Datasheet Details

Part number G05NP10S
Manufacturer GOFORD
File Size 571.03 KB
Description N- and P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G05NP10S Datasheet
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Full PDF Text Transcription

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GOFORD G05NP10S N and P Channel Enhancement Mode Power MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ⚫ NMOS ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 10V) ⚫ RDS(ON) (at VGS = 4.
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