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G05NP10S - N- and P-Channel Enhancement Mode Power MOSFET

General Description

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Key Features

  • NMOS.
  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V) 100V 5A < 170mΩ < 180mΩ Schematic diagram.
  • PMOS.
  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V) -100V -6A < 200mΩ.
  • 100% Avalanche Tested.
  • RoHS Compliant Marking and pin assignment.

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Datasheet Details

Part number G05NP10S
Manufacturer GOFORD
File Size 571.03 KB
Description N- and P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G05NP10S Datasheet

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Full PDF Text Transcription (Reference)

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GOFORD G05NP10S N and P Channel Enhancement Mode Power MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ⚫ NMOS ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 10V) ⚫ RDS(ON) (at VGS = 4.