G05NP10S Overview
Description
This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
Key Features
- ID (at VGS = 10V)
- RDS(ON) (at VGS = 10V)
- RDS(ON) (at VGS = 4.5V) 100V 5A < 170mΩ < 180mΩ - PMOS
- ID (at VGS = 10V)
- RDS(ON) (at VGS = 10V)
- 100V -6A < 200mΩ
- 100% Avalanche Tested
- RoHS Compliant Marking and pin assignment
