Part number:
G080N10T
Manufacturer:
GOFORD
File Size:
0.98 MB
Description:
N-channel enhancement mode power mosfet.
* l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 180A < 7.5mΩ < 8mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram Application l Power switch l DC/DC converters TO-220 Ordering Information Device G080N10T Package TO-220 Marking G080N10 Packagin
G080N10T
GOFORD
0.98 MB
N-channel enhancement mode power mosfet.
📁 Related Datasheet
G080N10 N-Channel Enhancement Mode Power MOSFET (GOFORD)
G080Y1-T01 TFT LCD Module (Chi Mei)
G081PU11500M High Power Fiber Coupled Infrared Laser Diode (Roithner)
G081PU1600M High Power Fiber Coupled Infrared Laser Diode (Roithner)
G081PU1750M High Power Fiber Coupled Infrared Laser Diode (Roithner)
G081PU210W High Power Fiber Coupled Infrared Laser Diode (Roithner)
G081PU25W High Power Fiber Coupled Infrared Laser Diode (Roithner)
G081PU312W High Power Fiber Coupled Infrared Laser Diode (Roithner)
G081PU314W High Power Fiber Coupled Infrared Laser Diode (Roithner)
G081PU325W High Power Fiber Coupled Infrared Laser Diode (Roithner)