G080N10T Datasheet, Mosfet, GOFORD

G080N10T Features

  • Mosfet l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 180A < 7.5mΩ < 8mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram Application l Power

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Part number:

G080N10T

Manufacturer:

GOFORD

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0.98MB

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of app

Datasheet Preview: G080N10T 📥 Download PDF (0.98MB)
Page 2 of G080N10T Page 3 of G080N10T

G080N10T Application

  • Applications General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 180A < 7.5mΩ < 8mΩ l 100% Avala

TAGS

G080N10T
N-Channel
Enhancement
Mode
Power
MOSFET
GOFORD

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Stock and price

part
Goford Semiconductor
MOSFET N-CH 100V 180A TO-220
DigiKey
G080N10T
114 In Stock
Qty : 5000 units
Unit Price : $0.77
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