G080N10 Datasheet, Mosfet, GOFORD

G080N10 Features

• Mosfet l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 180A < 7.5mΩ < 8mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram Application l Power

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Part number:

G080N10

Manufacturer:

GOFORD

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0.98MB

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of app

G080N10 Application

• Applications General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 180A < 7.5mΩ < 8mΩ l 100% Avala

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G080N10

GOFORD

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