G081PU314W Datasheet, diode equivalent, Roithner

G081PU314W Features

• Diode
• CW Output Power: 14 W
• Typical 808 nm Emission Wavelength
• High Reliability
• High Efficiency Applications
• Laser Pumping
• Medical

PDF File Details

Part number:

G081PU314W

Manufacturer:

Roithner

File Size:

200.00kb

Download:

📄 Datasheet

Description:

High power fiber coupled infrared laser diode.

G081PU314W Application

• Applications
• Laser Pumping
• Medical Usage
• Printing
• Heating
• Material Dealing
• Marking Spe

TAGS

G081PU314W

Roithner

📁 Related Datasheet

G081PU312W - High Power Fiber Coupled Infrared Laser Diode (Roithner)
G081PU312W TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 12 W • Typical 808 nm Emission Wavelength • High .

G081PU325W - High Power Fiber Coupled Infrared Laser Diode (Roithner)
G081PU325W TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 25 mW • Typical 808 nm Emission Wavelength • High.

G081PU11500M - High Power Fiber Coupled Infrared Laser Diode (Roithner)
G081PU11500M TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 1.5 W • Typical 808 nm Emission Wavelength • Hi.

G081PU1600M - High Power Fiber Coupled Infrared Laser Diode (Roithner)
G081PU1600M TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 600 mW • Typical 808 nm Emission Wavelength • Hi.

G081PU1750M - High Power Fiber Coupled Infrared Laser Diode (Roithner)
G081PU1750M TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 750 mW • Typical 808 nm Emission Wavelength • Hi.

G081PU210W - High Power Fiber Coupled Infrared Laser Diode (Roithner)
G081PU210W TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 10 W • Typical 808 nm Emission Wavelength • High .

G081PU25W - High Power Fiber Coupled Infrared Laser Diode (Roithner)
G081PU25W TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 5 W • Typical 808 nm Emission Wavelength • High Re.

G080N10 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G080N10T N-Channel Enhancement Mode Power MOSFET Description The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G080N10T - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G080N10T N-Channel Enhancement Mode Power MOSFET Description The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G080Y1-T01 - TFT LCD Module (Chi Mei)
Issued Date: Jan. 09, 2009 Model No.: G080Y1-T01 Tentative TFT LCD Tentative Specification MODEL NO.: G080Y1-T01 Customer: Approved by: Note: °O¿.